% -*- texinfo -*-
%
% @deftypefn{Function File} @
% {[@var{a},@var{b},@var{c}]=} Mschichmanhodgesmosfet@
% (@var{string}, @var{parameters}, @var{parameternames}, @
% @var{extvar},@var{intvar},@var{t})
%
% SBN file implementing Schichman-Hodges MOSFETs model.
%
% @var{string} is used to select among models. Possible models are:
%
% @enumerate
% @item @var{string} = 'NMOS' (Schichman-Hodges n-MOSFET)
% @item @var{string} = 'PMOS' (Schichman-Hodges p-MOSFET)
% @item @var{string} = 'NMOStpar' (n-MOSFET with temperature treated as a parameter)
% @item @var{string} = 'PMOStpar' (p-MOSFET with temperature treated as a parameter)
% @item @var{string} = 'NMOSnoP' (n-MOSFET without heat-flux)
% @item @var{string} = 'PMOSnoP' (p-MOSFET without heat-flux)
% @end enumerate
%
% Parameters for all the above models are:
% @itemize
% @item rd -> parasitic resistance between drain and source
% @item W -> MOSFET width
% @item L -> channel length
% @item mu0 -> reference value for mobility
% @item Vth -> threshold voltage
% @item Cox -> oxide capacitance
% @item Cgs -> gate-source capacitance
% @item Cgd -> gate-drain capacitance
% @item Cgb -> gate-bulk capacitance
% @item Csb -> source-bulk capacitance
% @item Cdb -> drain-bulk capacitance
% @item Tshift -> shift for reference temperature on MOSFETs (default 0)
% @end itemize
%
% @seealso{ PRSiffparse, ASMinitsystem, ASMbuildsystem, the IFF file
% format specifications }
% @end deftypefn